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Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

In this paper, we present a Ku-band 50 W internally-matched power amplifier that asymmetrically combines the power transistor cells of the GaN high electron mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed using a large-signal transistor cell model in the foundry pro...

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Detalles Bibliográficos
Autores principales:	Kim, Seil, Lee, Min-Pyo, Hong, Sung-June, Kim, Dong-Wook
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316699/ https://www.ncbi.nlm.nih.gov/pubmed/30477207 http://dx.doi.org/10.3390/mi9120619

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