Variability Predictions for the Next Technology Generations of n-type Si(x)Ge(1−x) Nanowire MOSFETs

Using a state-of-the-art quantum transport simulator based on the effective mass approximation, we have thoroughly studied the impact of variability on [Formula: see text] channel gate-all-around nanowire metal-oxide-semiconductor field-effect transistors (NWFETs) associated with random discrete dop...

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Detalles Bibliográficos
Autores principales: Lee, Jaehyun, Badami, Oves, Carrillo-Nuñez, Hamilton, Berrada, Salim, Medina-Bailon, Cristina, Dutta, Tapas, Adamu-Lema, Fikru, Georgiev, Vihar P., Asenov, Asen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316762/
https://www.ncbi.nlm.nih.gov/pubmed/30563045
http://dx.doi.org/10.3390/mi9120643

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316762/
https://www.ncbi.nlm.nih.gov/pubmed/30563045
http://dx.doi.org/10.3390/mi9120643

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