Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 10(18) cm(−3) and mobility 980 cm(2)/(V s)) showed good rectifying behavi...

Descripción completa

Detalles Bibliográficos
Autores principales: Svrcek, Vladimir, Kolenda, Marek, Kadys, Arunas, Reklaitis, Ignas, Dobrovolskas, Darius, Malinauskas, Tadas, Lozach, Mickael, Mariotti, Davide, Strassburg, Martin, Tomašiūnas, Roland
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316791/
https://www.ncbi.nlm.nih.gov/pubmed/30545138
http://dx.doi.org/10.3390/nano8121039

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316791/
https://www.ncbi.nlm.nih.gov/pubmed/30545138
http://dx.doi.org/10.3390/nano8121039

Ejemplares similares