Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

In this study, silicon nitride (SiN(x)) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and var...

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Detalles Bibliográficos
Autores principales: Ma, Hong-Ping, Lu, Hong-Liang, Yang, Jia-He, Li, Xiao-Xi, Wang, Tao, Huang, Wei, Yuan, Guang-Jie, Komarov, Fadei F., Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316811/
https://www.ncbi.nlm.nih.gov/pubmed/30563091
http://dx.doi.org/10.3390/nano8121008

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316811/
https://www.ncbi.nlm.nih.gov/pubmed/30563091
http://dx.doi.org/10.3390/nano8121008

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