A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors

A comparative study on the effects of e-beam deposited gate dielectrics for amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) has been carried out using SiO(2), Si(3)N(4), and Ta(2)O(5) dielectric materials. The channel width dependent device electrical performances were inve...

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Detalles Bibliográficos
Autores principales: Wu, Gwomei, Sahoo, Anup K., Chen, Dave W., Chang, J. W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316941/
https://www.ncbi.nlm.nih.gov/pubmed/30544867
http://dx.doi.org/10.3390/ma11122502

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316941/
https://www.ncbi.nlm.nih.gov/pubmed/30544867
http://dx.doi.org/10.3390/ma11122502

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