Tunable Luminescent A-SiN(x)O(y) Films with High Internal Quantum Efficiency and Fast Radiative Recombination Rates

In this work, we systematically investigated the N(x) bonding defects that induced high photoluminescence internal quantum efficiencies (PL IQEs) and very fast radiative recombination processes in amorphous silicon oxynitride (a-SiN(x)O(y)) systems. The luminescent N‒Si‒O bonding-related defect stat...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Pengzhan, Zhang, Leng, Ge, Xuefeng, Wang, Sake
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316973/
https://www.ncbi.nlm.nih.gov/pubmed/30544786
http://dx.doi.org/10.3390/ma11122494

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316973/
https://www.ncbi.nlm.nih.gov/pubmed/30544786
http://dx.doi.org/10.3390/ma11122494

Ejemplares similares