Tunable Luminescent A-SiN(x)O(y) Films with High Internal Quantum Efficiency and Fast Radiative Recombination Rates

In this work, we systematically investigated the N(x) bonding defects that induced high photoluminescence internal quantum efficiencies (PL IQEs) and very fast radiative recombination processes in amorphous silicon oxynitride (a-SiN(x)O(y)) systems. The luminescent N‒Si‒O bonding-related defect states were checked for the XPS, EPR, and temperature-dependent steady-state PL (TD-SSPL) properties. The PL IQEs were calculated from PL quantum yields through the principle of planar geometry optics, and then confirmed by the TD-SSPL properties. The radiative recombination rates [k(r)(R)] were determined by combining the PL IQE values and ns-PL lifetimes obtained from time-resolved PL measurements. Both the PL IQE, exceeding 72%, and the fast k(r)(R) (~10(8) s(−1)) are proportional to the concentration of N(x) defects, which can be explained by N‒Si‒O bonding states related to the quasi-three-level model, suggesting the possible realization of stimulated light emission in a-SiN(x)O(y) systems.