Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-la...

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Detalles Bibliográficos
Autores principales: Ren, Fang, Yin, Yue, Wang, Yunyu, Liu, Zhiqiang, Liang, Meng, Ou, Haiyan, Ao, Jinping, Wei, Tongbo, Yan, Jianchang, Yuan, Guodong, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin, Dasa, Dheeraj, Weman, Helge
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316983/
https://www.ncbi.nlm.nih.gov/pubmed/30486245
http://dx.doi.org/10.3390/ma11122372

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316983/
https://www.ncbi.nlm.nih.gov/pubmed/30486245
http://dx.doi.org/10.3390/ma11122372

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