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Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors

In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiC(p)) were added into the Ag sinter joining paste to improve the high-temperature reliability of the sinter...

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Detalles Bibliográficos
Autores principales: Noh, Seungjun, Zhang, Hao, Suganuma, Katsuaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6317002/
https://www.ncbi.nlm.nih.gov/pubmed/30545143
http://dx.doi.org/10.3390/ma11122531