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Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors

In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiC(p)) were added into the Ag sinter joining paste to improve the high-temperature reliability of the sinter...

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Autores principales: Noh, Seungjun, Zhang, Hao, Suganuma, Katsuaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6317002/
https://www.ncbi.nlm.nih.gov/pubmed/30545143
http://dx.doi.org/10.3390/ma11122531
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author Noh, Seungjun
Zhang, Hao
Suganuma, Katsuaki
author_facet Noh, Seungjun
Zhang, Hao
Suganuma, Katsuaki
author_sort Noh, Seungjun
collection PubMed
description In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiC(p)) were added into the Ag sinter joining paste to improve the high-temperature reliability of the sintered Ag joints. The use of SiC(p) in the bonding structures prevented the morphological evolution of the microporous structure and maintained a stable structure after high temperature storage (HTS) tests, which reduces the risk of void formation and metallization dewetting. In addition to the Ag paste, on the side of direct bonded copper (DBC) substrates, the thermal reliability of various surface metallizations such as Ni, Ti, and Pt were also evaluated by cross-section morphology and on-resistance tests. The results indicated that Ti and Pt diffusion barrier layers played a key role in preventing interfacial degradations between sintered Ag and Cu at high temperatures. At the same time, a Ni barrier layer showed a relatively weak barrier effect due to the generation of a thin Ni oxide layer at the interface with a Ag plating layer. The changes of on-resistance indicated that Pt metallization has relatively better electrical properties compared to that of Ti and Ni. Ag metallization, which lacks barrier capability, showed severe growth in an oxide layer between Ag and Cu, however, the on-resistance showed fewer changes.
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spelling pubmed-63170022019-01-08 Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors Noh, Seungjun Zhang, Hao Suganuma, Katsuaki Materials (Basel) Article In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiC(p)) were added into the Ag sinter joining paste to improve the high-temperature reliability of the sintered Ag joints. The use of SiC(p) in the bonding structures prevented the morphological evolution of the microporous structure and maintained a stable structure after high temperature storage (HTS) tests, which reduces the risk of void formation and metallization dewetting. In addition to the Ag paste, on the side of direct bonded copper (DBC) substrates, the thermal reliability of various surface metallizations such as Ni, Ti, and Pt were also evaluated by cross-section morphology and on-resistance tests. The results indicated that Ti and Pt diffusion barrier layers played a key role in preventing interfacial degradations between sintered Ag and Cu at high temperatures. At the same time, a Ni barrier layer showed a relatively weak barrier effect due to the generation of a thin Ni oxide layer at the interface with a Ag plating layer. The changes of on-resistance indicated that Pt metallization has relatively better electrical properties compared to that of Ti and Ni. Ag metallization, which lacks barrier capability, showed severe growth in an oxide layer between Ag and Cu, however, the on-resistance showed fewer changes. MDPI 2018-12-12 /pmc/articles/PMC6317002/ /pubmed/30545143 http://dx.doi.org/10.3390/ma11122531 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Noh, Seungjun
Zhang, Hao
Suganuma, Katsuaki
Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors
title Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors
title_full Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors
title_fullStr Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors
title_full_unstemmed Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors
title_short Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors
title_sort heat-resistant microporous ag die-attach structure for wide band-gap power semiconductors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6317002/
https://www.ncbi.nlm.nih.gov/pubmed/30545143
http://dx.doi.org/10.3390/ma11122531
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