Structure and Electron Mobility of ScN Films Grown on α-Al(2)O(3)(1 [Formula: see text] 02) Substrates

Scandium nitride (ScN) films were grown on α-Al(2)O(3)([Formula: see text]) substrates using the molecular beam epitaxy method, and the heteroepitaxial growth of ScN on α-Al(2)O(3)([Formula: see text]) and their electric properties were studied. Epitaxial ScN films with an orientation relationship (100)ScN || ([Formula: see text])α-Al(2)O(3) and [001]ScN || [[Formula: see text]]α-Al(2)O(3) were grown on α-Al(2)O(3)([Formula: see text]) substrates. Their crystalline orientation anisotropy was found to be small. In addition, [100] of the ScN films were tilted along [[Formula: see text]] of α-Al(2)O(3)([Formula: see text]) in the initial stage of growth. The tilt angle between the film growth direction and [100] of ScN was 1.4–2.0° and increased with growth temperature. The crystallinity of the ScN films also improved with the increasing growth temperature. The film with the highest Hall mobility was obtained at the boundary growth conditions determined by the relationship between the crystallinity and the nonstoichiometric composition because the film with the highest crystallinity was obtained under the Sc-rich growth condition. The decreased Hall mobility with a simultaneous improvement in film crystallinity was caused by the increased carrier scattering by the ionized donors originating from the nonstoichiometric composition.