Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga(2)O(3) Thin Film

We studied the reverse current emission mechanism of the Mo/β-Ga(2)O(3) Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carr...

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Detalles Bibliográficos
Autores principales: Hu, Zhuangzhuang, Feng, Qian, Feng, Zhaoqing, Cai, Yuncong, Shen, Yixian, Yan, Guangshuo, Lu, Xiaoli, Zhang, Chunfu, Zhou, Hong, Zhang, Jincheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6318155/
https://www.ncbi.nlm.nih.gov/pubmed/30607511
http://dx.doi.org/10.1186/s11671-018-2837-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6318155/
https://www.ncbi.nlm.nih.gov/pubmed/30607511
http://dx.doi.org/10.1186/s11671-018-2837-2

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