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Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga(2)O(3) Thin Film
We studied the reverse current emission mechanism of the Mo/β-Ga(2)O(3) Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carr...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6318155/ https://www.ncbi.nlm.nih.gov/pubmed/30607511 http://dx.doi.org/10.1186/s11671-018-2837-2 |