High-Voltage β-Ga(2)O(3) Schottky Diode with Argon-Implanted Edge Termination

The edge-terminated Au/Ni/β-Ga(2)O(3) Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50 keV and dose of 5 × 10(14) cm(−2) and 1 × 10(16) cm(−2), the reverse breakdown volt...

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Detalles Bibliográficos
Autores principales: Gao, Yangyang, Li, Ang, Feng, Qian, Hu, Zhuangzhuang, Feng, Zhaoqing, Zhang, Ke, Lu, Xiaoli, Zhang, Chunfu, Zhou, Hong, Mu, Wenxiang, Jia, Zhitai, Zhang, Jincheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6323049/
https://www.ncbi.nlm.nih.gov/pubmed/30617428
http://dx.doi.org/10.1186/s11671-018-2849-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6323049/
https://www.ncbi.nlm.nih.gov/pubmed/30617428
http://dx.doi.org/10.1186/s11671-018-2849-y

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