High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation

We report the amorphous Si passivation of Ge pMOSFETs fabricated on (001)-, (011)-, and (111)-orientated surfaces for advanced CMOS and thin film transistor applications. Amorphous Si passivation of Ge is carried out by magnetron sputtering at room temperature. With the fixed thickness of Si t(Si),...

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Detalles Bibliográficos
Autores principales: Liu, Huan, Han, Genquan, Liu, Yan, Tang, Xiaosheng, Yang, Jingchen, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6325052/
https://www.ncbi.nlm.nih.gov/pubmed/30623254
http://dx.doi.org/10.1186/s11671-018-2847-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6325052/
https://www.ncbi.nlm.nih.gov/pubmed/30623254
http://dx.doi.org/10.1186/s11671-018-2847-0

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