RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells h...

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Detalles Bibliográficos
Autores principales: Chen, Chih Yuan, Lin, Chrong Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6325054/
https://www.ncbi.nlm.nih.gov/pubmed/30623262
http://dx.doi.org/10.1186/s11671-018-2846-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6325054/
https://www.ncbi.nlm.nih.gov/pubmed/30623262
http://dx.doi.org/10.1186/s11671-018-2846-1

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