RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells h...

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Detalles Bibliográficos
Autores principales: Chen, Chih Yuan, Lin, Chrong Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6325054/
https://www.ncbi.nlm.nih.gov/pubmed/30623262
http://dx.doi.org/10.1186/s11671-018-2846-1
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author Chen, Chih Yuan
Lin, Chrong Jung
King, Ya-Chin
author_facet Chen, Chih Yuan
Lin, Chrong Jung
King, Ya-Chin
author_sort Chen, Chih Yuan
collection PubMed
description In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells have a stronger tendency to show more frequent and intense RTN signals. The increase of noise levels in FIND RRAM cells can be alleviated generally by high temperature anneal, and with this concept, an on chip annealing scheme is proposed and demonstrated.
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spelling pubmed-63250542019-01-23 RTN and Annealing Related to Stress and Temperature in FIND RRAM Array Chen, Chih Yuan Lin, Chrong Jung King, Ya-Chin Nanoscale Res Lett Nano Express In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells have a stronger tendency to show more frequent and intense RTN signals. The increase of noise levels in FIND RRAM cells can be alleviated generally by high temperature anneal, and with this concept, an on chip annealing scheme is proposed and demonstrated. Springer US 2019-01-08 /pmc/articles/PMC6325054/ /pubmed/30623262 http://dx.doi.org/10.1186/s11671-018-2846-1 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Chen, Chih Yuan
Lin, Chrong Jung
King, Ya-Chin
RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
title RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
title_full RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
title_fullStr RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
title_full_unstemmed RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
title_short RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
title_sort rtn and annealing related to stress and temperature in find rram array
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6325054/
https://www.ncbi.nlm.nih.gov/pubmed/30623262
http://dx.doi.org/10.1186/s11671-018-2846-1
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