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RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells h...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6325054/ https://www.ncbi.nlm.nih.gov/pubmed/30623262 http://dx.doi.org/10.1186/s11671-018-2846-1 |