Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates for future low-power CMOS applications including mobile and Internet of Things (IoT) products. A vertical gate-all-around (VGAA) architecture with a core shell (C-S) structure is the leading contender to meet CMOS foo...

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Detalles Bibliográficos
Autores principales: Vasen, T., Ramvall, P., Afzalian, A., Doornbos, G., Holland, M., Thelander, C., Dick, K. A., Wernersson, L. - E., Passlack, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6336843/
https://www.ncbi.nlm.nih.gov/pubmed/30655575
http://dx.doi.org/10.1038/s41598-018-36549-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6336843/
https://www.ncbi.nlm.nih.gov/pubmed/30655575
http://dx.doi.org/10.1038/s41598-018-36549-z

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