Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

The properties of Al-doped SnO(x) films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO(x) thin-film transistors (TFTs) exhibit improved semiconductor characteristi...

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Detalles Bibliográficos
Autores principales: Lee, Seung-Hun, Kwon, Kihwan, Kim, Kwanoh, Yoon, Jae Sung, Choi, Doo-Sun, Yoo, Yeongeun, Kim, Chunjoong, Kang, Shinill, Kim, Jeong Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337128/
https://www.ncbi.nlm.nih.gov/pubmed/30609829
http://dx.doi.org/10.3390/ma12010137

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337128/
https://www.ncbi.nlm.nih.gov/pubmed/30609829
http://dx.doi.org/10.3390/ma12010137

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