Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural...

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Detalles Bibliográficos
Autores principales: Jang, Kyungsoo, Kim, Youngkuk, Phong, Pham Duy, Lee, Younjung, Park, Joonghyun, Yi, Junsin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337170/
https://www.ncbi.nlm.nih.gov/pubmed/30621000
http://dx.doi.org/10.3390/ma12010161

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337170/
https://www.ncbi.nlm.nih.gov/pubmed/30621000
http://dx.doi.org/10.3390/ma12010161

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