Performance Evaluation and Comparison between Direct and Chemical-Assisted Picosecond Laser Micro-Trepanning of Single Crystalline Silicon

The fabrication of micro-holes in silicon substrates that have a proper taper, higher depth-to-diameter ratio, and better surface quality has been attracting intense interest for a long time due to its importance in the semiconductor and MEMS (Micro-Electro-Mechanical System) industry. In this paper, an experimental investigation of the machining performance of the direct and chemical-assisted picosecond laser trepanning of single crystalline silicon is conducted, with a view to assess the two machining methods. The relevant parameters affecting the trepanning process are considered, employing the orthogonal experimental design scheme. It is found that the direct laser trepanning results are associated with evident thermal defects, while the chemical-assisted method is capable of machining micro-holes with negligible thermal damage. Range analysis is then carried out, and the effects of the processing parameters on the hole characteristics are amply discussed to obtain the recommended parameters. Finally, the material removal mechanisms that are involved in the two machining methods are adequately analyzed. For the chemical-assisted trepanning case, the enhanced material removal rate may be attributed to the serious mechanical effects caused by the liquid-confined plasma and cavitation bubbles, and the chemical etching effect provided by NaOH solution.