InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities

III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to it...

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Detalles Bibliográficos
Autores principales: Convertino, Clarissa, Zota, Cezar, Schmid, Heinz, Caimi, Daniele, Sousa, Marilyne, Moselund, Kirsten, Czornomaz, Lukas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337424/
https://www.ncbi.nlm.nih.gov/pubmed/30591676
http://dx.doi.org/10.3390/ma12010087

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337424/
https://www.ncbi.nlm.nih.gov/pubmed/30591676
http://dx.doi.org/10.3390/ma12010087

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