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InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities

III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to it...

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Autores principales: Convertino, Clarissa, Zota, Cezar, Schmid, Heinz, Caimi, Daniele, Sousa, Marilyne, Moselund, Kirsten, Czornomaz, Lukas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337424/
https://www.ncbi.nlm.nih.gov/pubmed/30591676
http://dx.doi.org/10.3390/ma12010087
_version_ 1783388251466235904
author Convertino, Clarissa
Zota, Cezar
Schmid, Heinz
Caimi, Daniele
Sousa, Marilyne
Moselund, Kirsten
Czornomaz, Lukas
author_facet Convertino, Clarissa
Zota, Cezar
Schmid, Heinz
Caimi, Daniele
Sousa, Marilyne
Moselund, Kirsten
Czornomaz, Lukas
author_sort Convertino, Clarissa
collection PubMed
description III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal–organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selective epitaxy (TASE), which allows for the local integration of different III-V semiconductors on silicon. FinFETs with a gate length down to 20nm are fabricated based on a CMOS-compatible replacement-metal-gate process flow. This includes self-aligned source-drain n(+) InGaAs regrown contacts as well as 4 nm source-drain spacers for gate-contacts isolation. The InGaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality. Furthermore, we demonstrate a controlled InGaAs digital etching process to create doped extensions underneath the source-drain spacer regions. We report a device with gate length of 90 nm and fin width of 40 nm showing on-current of 100 µA/µm and subthreshold slope of about 85 mV/dec.
format Online
Article
Text
id pubmed-6337424
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-63374242019-01-22 InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities Convertino, Clarissa Zota, Cezar Schmid, Heinz Caimi, Daniele Sousa, Marilyne Moselund, Kirsten Czornomaz, Lukas Materials (Basel) Article III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal–organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selective epitaxy (TASE), which allows for the local integration of different III-V semiconductors on silicon. FinFETs with a gate length down to 20nm are fabricated based on a CMOS-compatible replacement-metal-gate process flow. This includes self-aligned source-drain n(+) InGaAs regrown contacts as well as 4 nm source-drain spacers for gate-contacts isolation. The InGaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality. Furthermore, we demonstrate a controlled InGaAs digital etching process to create doped extensions underneath the source-drain spacer regions. We report a device with gate length of 90 nm and fin width of 40 nm showing on-current of 100 µA/µm and subthreshold slope of about 85 mV/dec. MDPI 2018-12-27 /pmc/articles/PMC6337424/ /pubmed/30591676 http://dx.doi.org/10.3390/ma12010087 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Convertino, Clarissa
Zota, Cezar
Schmid, Heinz
Caimi, Daniele
Sousa, Marilyne
Moselund, Kirsten
Czornomaz, Lukas
InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
title InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
title_full InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
title_fullStr InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
title_full_unstemmed InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
title_short InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
title_sort ingaas finfets directly integrated on silicon by selective growth in oxide cavities
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337424/
https://www.ncbi.nlm.nih.gov/pubmed/30591676
http://dx.doi.org/10.3390/ma12010087
work_keys_str_mv AT convertinoclarissa ingaasfinfetsdirectlyintegratedonsiliconbyselectivegrowthinoxidecavities
AT zotacezar ingaasfinfetsdirectlyintegratedonsiliconbyselectivegrowthinoxidecavities
AT schmidheinz ingaasfinfetsdirectlyintegratedonsiliconbyselectivegrowthinoxidecavities
AT caimidaniele ingaasfinfetsdirectlyintegratedonsiliconbyselectivegrowthinoxidecavities
AT sousamarilyne ingaasfinfetsdirectlyintegratedonsiliconbyselectivegrowthinoxidecavities
AT moselundkirsten ingaasfinfetsdirectlyintegratedonsiliconbyselectivegrowthinoxidecavities
AT czornomazlukas ingaasfinfetsdirectlyintegratedonsiliconbyselectivegrowthinoxidecavities