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InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to it...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337424/ https://www.ncbi.nlm.nih.gov/pubmed/30591676 http://dx.doi.org/10.3390/ma12010087 |