Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ phy...

Descripción completa

Detalles Bibliográficos
Autores principales: Sadi, Toufik, Medina-Bailon, Cristina, Nedjalkov, Mihail, Lee, Jaehyun, Badami, Oves, Berrada, Salim, Carrillo-Nunez, Hamilton, Georgiev, Vihar, Selberherr, Siegfried, Asenov, Asen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337633/
https://www.ncbi.nlm.nih.gov/pubmed/30609720
http://dx.doi.org/10.3390/ma12010124

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337633/
https://www.ncbi.nlm.nih.gov/pubmed/30609720
http://dx.doi.org/10.3390/ma12010124

Ejemplares similares