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Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ phy...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337633/ https://www.ncbi.nlm.nih.gov/pubmed/30609720 http://dx.doi.org/10.3390/ma12010124 |
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author | Sadi, Toufik Medina-Bailon, Cristina Nedjalkov, Mihail Lee, Jaehyun Badami, Oves Berrada, Salim Carrillo-Nunez, Hamilton Georgiev, Vihar Selberherr, Siegfried Asenov, Asen |
author_facet | Sadi, Toufik Medina-Bailon, Cristina Nedjalkov, Mihail Lee, Jaehyun Badami, Oves Berrada, Salim Carrillo-Nunez, Hamilton Georgiev, Vihar Selberherr, Siegfried Asenov, Asen |
author_sort | Sadi, Toufik |
collection | PubMed |
description | Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ physics and operation, and unlock the devices’ technological potential. One simulation approach that delivers reliable mobility values at low-field near-equilibrium conditions is the combination of the quantum confinement effects with the semi-classical Boltzmann transport equation, solved within the relaxation time approximation adopting the Kubo–Greenwood (KG) formalism, as implemented in this work. We consider the most relevant scattering mechanisms governing intraband and multi-subband transitions in NWTs, including phonon, surface roughness and ionized impurity scattering, whose rates have been calculated directly from the Fermi’s Golden rule. In this paper, we couple multi-slice Poisson–Schrödinger solutions to the KG method to analyze the impact of various scattering mechanisms on the mobility of small diameter nanowire transistors. As demonstrated here, phonon and surface roughness scattering are strong mobility-limiting mechanisms in NWTs. However, scattering from ionized impurities has proved to be another important mobility-limiting mechanism, being mandatory for inclusion when simulating realistic and doped nanostructures, due to the short range Coulomb interaction with the carriers. We also illustrate the impact of the nanowire geometry, highlighting the advantage of using circular over square cross section shapes. |
format | Online Article Text |
id | pubmed-6337633 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-63376332019-01-22 Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors Sadi, Toufik Medina-Bailon, Cristina Nedjalkov, Mihail Lee, Jaehyun Badami, Oves Berrada, Salim Carrillo-Nunez, Hamilton Georgiev, Vihar Selberherr, Siegfried Asenov, Asen Materials (Basel) Article Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ physics and operation, and unlock the devices’ technological potential. One simulation approach that delivers reliable mobility values at low-field near-equilibrium conditions is the combination of the quantum confinement effects with the semi-classical Boltzmann transport equation, solved within the relaxation time approximation adopting the Kubo–Greenwood (KG) formalism, as implemented in this work. We consider the most relevant scattering mechanisms governing intraband and multi-subband transitions in NWTs, including phonon, surface roughness and ionized impurity scattering, whose rates have been calculated directly from the Fermi’s Golden rule. In this paper, we couple multi-slice Poisson–Schrödinger solutions to the KG method to analyze the impact of various scattering mechanisms on the mobility of small diameter nanowire transistors. As demonstrated here, phonon and surface roughness scattering are strong mobility-limiting mechanisms in NWTs. However, scattering from ionized impurities has proved to be another important mobility-limiting mechanism, being mandatory for inclusion when simulating realistic and doped nanostructures, due to the short range Coulomb interaction with the carriers. We also illustrate the impact of the nanowire geometry, highlighting the advantage of using circular over square cross section shapes. MDPI 2019-01-02 /pmc/articles/PMC6337633/ /pubmed/30609720 http://dx.doi.org/10.3390/ma12010124 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Sadi, Toufik Medina-Bailon, Cristina Nedjalkov, Mihail Lee, Jaehyun Badami, Oves Berrada, Salim Carrillo-Nunez, Hamilton Georgiev, Vihar Selberherr, Siegfried Asenov, Asen Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors |
title | Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors |
title_full | Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors |
title_fullStr | Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors |
title_full_unstemmed | Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors |
title_short | Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors |
title_sort | simulation of the impact of ionized impurity scattering on the total mobility in si nanowire transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337633/ https://www.ncbi.nlm.nih.gov/pubmed/30609720 http://dx.doi.org/10.3390/ma12010124 |
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