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Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ phy...

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Autores principales: Sadi, Toufik, Medina-Bailon, Cristina, Nedjalkov, Mihail, Lee, Jaehyun, Badami, Oves, Berrada, Salim, Carrillo-Nunez, Hamilton, Georgiev, Vihar, Selberherr, Siegfried, Asenov, Asen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337633/
https://www.ncbi.nlm.nih.gov/pubmed/30609720
http://dx.doi.org/10.3390/ma12010124
_version_ 1783388300359237632
author Sadi, Toufik
Medina-Bailon, Cristina
Nedjalkov, Mihail
Lee, Jaehyun
Badami, Oves
Berrada, Salim
Carrillo-Nunez, Hamilton
Georgiev, Vihar
Selberherr, Siegfried
Asenov, Asen
author_facet Sadi, Toufik
Medina-Bailon, Cristina
Nedjalkov, Mihail
Lee, Jaehyun
Badami, Oves
Berrada, Salim
Carrillo-Nunez, Hamilton
Georgiev, Vihar
Selberherr, Siegfried
Asenov, Asen
author_sort Sadi, Toufik
collection PubMed
description Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ physics and operation, and unlock the devices’ technological potential. One simulation approach that delivers reliable mobility values at low-field near-equilibrium conditions is the combination of the quantum confinement effects with the semi-classical Boltzmann transport equation, solved within the relaxation time approximation adopting the Kubo–Greenwood (KG) formalism, as implemented in this work. We consider the most relevant scattering mechanisms governing intraband and multi-subband transitions in NWTs, including phonon, surface roughness and ionized impurity scattering, whose rates have been calculated directly from the Fermi’s Golden rule. In this paper, we couple multi-slice Poisson–Schrödinger solutions to the KG method to analyze the impact of various scattering mechanisms on the mobility of small diameter nanowire transistors. As demonstrated here, phonon and surface roughness scattering are strong mobility-limiting mechanisms in NWTs. However, scattering from ionized impurities has proved to be another important mobility-limiting mechanism, being mandatory for inclusion when simulating realistic and doped nanostructures, due to the short range Coulomb interaction with the carriers. We also illustrate the impact of the nanowire geometry, highlighting the advantage of using circular over square cross section shapes.
format Online
Article
Text
id pubmed-6337633
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-63376332019-01-22 Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors Sadi, Toufik Medina-Bailon, Cristina Nedjalkov, Mihail Lee, Jaehyun Badami, Oves Berrada, Salim Carrillo-Nunez, Hamilton Georgiev, Vihar Selberherr, Siegfried Asenov, Asen Materials (Basel) Article Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ physics and operation, and unlock the devices’ technological potential. One simulation approach that delivers reliable mobility values at low-field near-equilibrium conditions is the combination of the quantum confinement effects with the semi-classical Boltzmann transport equation, solved within the relaxation time approximation adopting the Kubo–Greenwood (KG) formalism, as implemented in this work. We consider the most relevant scattering mechanisms governing intraband and multi-subband transitions in NWTs, including phonon, surface roughness and ionized impurity scattering, whose rates have been calculated directly from the Fermi’s Golden rule. In this paper, we couple multi-slice Poisson–Schrödinger solutions to the KG method to analyze the impact of various scattering mechanisms on the mobility of small diameter nanowire transistors. As demonstrated here, phonon and surface roughness scattering are strong mobility-limiting mechanisms in NWTs. However, scattering from ionized impurities has proved to be another important mobility-limiting mechanism, being mandatory for inclusion when simulating realistic and doped nanostructures, due to the short range Coulomb interaction with the carriers. We also illustrate the impact of the nanowire geometry, highlighting the advantage of using circular over square cross section shapes. MDPI 2019-01-02 /pmc/articles/PMC6337633/ /pubmed/30609720 http://dx.doi.org/10.3390/ma12010124 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Sadi, Toufik
Medina-Bailon, Cristina
Nedjalkov, Mihail
Lee, Jaehyun
Badami, Oves
Berrada, Salim
Carrillo-Nunez, Hamilton
Georgiev, Vihar
Selberherr, Siegfried
Asenov, Asen
Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
title Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
title_full Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
title_fullStr Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
title_full_unstemmed Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
title_short Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
title_sort simulation of the impact of ionized impurity scattering on the total mobility in si nanowire transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337633/
https://www.ncbi.nlm.nih.gov/pubmed/30609720
http://dx.doi.org/10.3390/ma12010124
work_keys_str_mv AT saditoufik simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors
AT medinabailoncristina simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors
AT nedjalkovmihail simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors
AT leejaehyun simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors
AT badamioves simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors
AT berradasalim simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors
AT carrillonunezhamilton simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors
AT georgievvihar simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors
AT selberherrsiegfried simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors
AT asenovasen simulationoftheimpactofionizedimpurityscatteringonthetotalmobilityinsinanowiretransistors