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Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ phy...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6337633/ https://www.ncbi.nlm.nih.gov/pubmed/30609720 http://dx.doi.org/10.3390/ma12010124 |