Impact of tensile strain on low Sn content GeSn lasing

In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increase...

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Detalles Bibliográficos
Autores principales: Rainko, Denis, Ikonic, Zoran, Elbaz, Anas, von den Driesch, Nils, Stange, Daniela, Herth, Etienne, Boucaud, Philippe, El Kurdi, Moustafa, Grützmacher, Detlev, Buca, Dan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6342923/
https://www.ncbi.nlm.nih.gov/pubmed/30670785
http://dx.doi.org/10.1038/s41598-018-36837-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6342923/
https://www.ncbi.nlm.nih.gov/pubmed/30670785
http://dx.doi.org/10.1038/s41598-018-36837-8

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