Cargando…

Impact of tensile strain on low Sn content GeSn lasing

In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increase...

Descripción completa

Detalles Bibliográficos
Autores principales:	Rainko, Denis, Ikonic, Zoran, Elbaz, Anas, von den Driesch, Nils, Stange, Daniela, Herth, Etienne, Boucaud, Philippe, El Kurdi, Moustafa, Grützmacher, Detlev, Buca, Dan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6342923/ https://www.ncbi.nlm.nih.gov/pubmed/30670785 http://dx.doi.org/10.1038/s41598-018-36837-8

Ejemplares similares

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
por: Rainko, Denis, et al.
Publicado: (2018)

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
por: von den Driesch, Nils, et al.
Publicado: (2018)

Structural Property Study for GeSn Thin Films
por: Zhang, Liyao, et al.
Publicado: (2020)

“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
por: Chang, Guo-En, et al.
Publicado: (2023)

Short-wave infrared cavity resonances in a single GeSn nanowire
por: Kim, Youngmin, et al.
Publicado: (2023)

Isothermal Heteroepitaxy of Ge(1–x)Sn(x) Structures for Electronic and Photonic Applications
por: Concepción, Omar, et al.
Publicado: (2023)

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering
por: Kim, Youngmin, et al.
Publicado: (2023)

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
por: Grant, Joshua, et al.
Publicado: (2021)

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)
por: Kim, Youngmin, et al.
Publicado: (2023)

Photoelectrical properties of graphene/doped GeSn vertical heterostructures
por: Lv, Yanhui, et al.
Publicado: (2020)

Defect-free high Sn-content GeSn on insulator grown by rapid melting growth
por: Liu, Zhi, et al.
Publicado: (2016)

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices
por: Nawwar, Mohamed A., et al.
Publicado: (2022)

Growth and applications of GeSn-related group-IV semiconductor materials
por: Zaima, Shigeaki, et al.
Publicado: (2015)

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications
por: Miao, Yuanhao, et al.
Publicado: (2021)

Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor
por: Yen, Te Jui, et al.
Publicado: (2022)

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications
por: Kong, Zhenzhen, et al.
Publicado: (2022)

Dark Current Analysis on GeSn p-i-n Photodetectors
por: Ghosh, Soumava, et al.
Publicado: (2023)

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
por: Dou, Wei, et al.
Publicado: (2018)

GeSnOI mid-infrared laser technology
por: Wang, Binbin, et al.
Publicado: (2021)

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications
por: Lin, Guangyang, et al.
Publicado: (2023)

Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform
por: Mączko, H. S., et al.
Publicado: (2016)

Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells
por: Mączko, Herbert S., et al.
Publicado: (2019)

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
por: Al-Saigh, Reem, et al.
Publicado: (2018)

Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
por: Baira, Mourad, et al.
Publicado: (2019)

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications
por: Ghosh, Soumava, et al.
Publicado: (2020)

Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics
por: Ghosh, Soumava, et al.
Publicado: (2022)

Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors
por: Chuang, Ricky Wenkuei, et al.
Publicado: (2022)

Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure
por: Huang, Zhong-Mei, et al.
Publicado: (2016)

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
por: Miao, Yuanhao, et al.
Publicado: (2023)

High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application
por: Yang, Jiayin, et al.
Publicado: (2019)

Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn
por: Wang, Nan, et al.
Publicado: (2020)

Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots
por: Baira, Mourad, et al.
Publicado: (2019)

Nanostructured Ge and GeSn films by high-pressure He plasma sputtering for high-capacity Li ion battery anodes
por: Uchida, Giichiro, et al.
Publicado: (2022)

Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
por: Nawwar, Mohamed A., et al.
Publicado: (2023)

Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods
por: Zhu, Guangjian, et al.
Publicado: (2020)

Correction: Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
por: Nawwar, Mohamed A., et al.
Publicado: (2023)

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density
por: Chang, Chiao, et al.
Publicado: (2022)

Tensile Properties of the Individual Phases in Unreacted Multifilament Nb$_{3}$Sn Wires
por: Scheuerlein, C, et al.
Publicado: (2007)

Microstructure and Tensile Properties of Friction Stir Processed Mg–Sn–Zn Alloy
por: Chen, Xiaoyang, et al.
Publicado: (2018)

Tensile Properties of the Individual Phases in Un-Reacted Multifilament Nb$_{3}$Sn Wires
por: Scheuerlein, C, et al.
Publicado: (2006)

Cannot write session to /tmp/vufind_sessions/sess_q1a303aailflpqp5lk8fehlm24