Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it doesn’t require high-density current to go through the tunnel junction. For perpendicular...

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Detalles Bibliográficos
Autores principales: Liu, Yang, Zhou, Bing, Zhu, Jian-Gang (Jimmy)
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6344501/
https://www.ncbi.nlm.nih.gov/pubmed/30674984
http://dx.doi.org/10.1038/s41598-018-37586-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6344501/
https://www.ncbi.nlm.nih.gov/pubmed/30674984
http://dx.doi.org/10.1038/s41598-018-37586-4

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