Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface

Synchrotron radiation core-level photoemission spectroscopy, scanning tunneling microscopy (STM), and first-principles calculations have been utilized to explore the growth processes and the atomic structure of the resulting films during the two-step molecular beam epitaxy (MBE) of In and Bi on the...

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Detalles Bibliográficos
Autores principales: Lin, Cho-Ying, Hsu, Chia-Hsiu, Huang, Yu-Zhang, Hsieh, Shih-Ching, Chen, Han-De, Huang, Li, Huang, Zhi-Quan, Chuang, Feng-Chuan, Lin, Deng-Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6345972/
https://www.ncbi.nlm.nih.gov/pubmed/30679630
http://dx.doi.org/10.1038/s41598-018-37051-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6345972/
https://www.ncbi.nlm.nih.gov/pubmed/30679630
http://dx.doi.org/10.1038/s41598-018-37051-2

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