A cryogenic spin-torque memory element with precessional magnetization dynamics

We present a study of precessional magnetization switching in orthogonal spin-torque spin-valve devices at low temperatures. The samples consist of a spin-polarizing layer that is magnetized out-of-the film plane and an in-plane magnetized free and reference magnetic layer separated by non-magnetic...

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Detalles Bibliográficos
Autores principales: Rowlands, G. E., Ryan, C. A., Ye, L., Rehm, L., Pinna, D., Kent, A. D., Ohki, T. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6349837/
https://www.ncbi.nlm.nih.gov/pubmed/30692580
http://dx.doi.org/10.1038/s41598-018-37204-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6349837/
https://www.ncbi.nlm.nih.gov/pubmed/30692580
http://dx.doi.org/10.1038/s41598-018-37204-3

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