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A cryogenic spin-torque memory element with precessional magnetization dynamics
We present a study of precessional magnetization switching in orthogonal spin-torque spin-valve devices at low temperatures. The samples consist of a spin-polarizing layer that is magnetized out-of-the film plane and an in-plane magnetized free and reference magnetic layer separated by non-magnetic...
Autores principales: | Rowlands, G. E., Ryan, C. A., Ye, L., Rehm, L., Pinna, D., Kent, A. D., Ohki, T. A. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6349837/ https://www.ncbi.nlm.nih.gov/pubmed/30692580 http://dx.doi.org/10.1038/s41598-018-37204-3 |
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