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Local electronic structure of doping defects on Tl/Si(111)1x1

The Tl/Si(111)1 × 1 surface is a representative of a 2D layer with Rashba-type spin-split electronic bands. To utilize the spin polarization, doping of the system should be understood on atomic level. We present a study of two types of atomic defects predicted to dope the considered electronic syste...

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Detalles Bibliográficos
Autores principales: Pieczyrak, Barbara, Jurczyszyn, Leszek, Sobotík, Pavel, Ošt’ádal, Ivan, Kocán, Pavel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6349925/
https://www.ncbi.nlm.nih.gov/pubmed/30692592
http://dx.doi.org/10.1038/s41598-018-37361-5