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Local electronic structure of doping defects on Tl/Si(111)1x1
The Tl/Si(111)1 × 1 surface is a representative of a 2D layer with Rashba-type spin-split electronic bands. To utilize the spin polarization, doping of the system should be understood on atomic level. We present a study of two types of atomic defects predicted to dope the considered electronic syste...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6349925/ https://www.ncbi.nlm.nih.gov/pubmed/30692592 http://dx.doi.org/10.1038/s41598-018-37361-5 |