Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes

The nature of reverse leakage current characteristics in InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN crystals detached from a Si substrate is investigated for the first time, using temperature-dependent current-voltage (T-I-V) measurement. It is found that the Si-based homoepitax...

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Detalles Bibliográficos
Autores principales: Lee, Moonsang, Lee, Hyun Uk, Song, Keun Man, Kim, Jaekyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6353897/
https://www.ncbi.nlm.nih.gov/pubmed/30700809
http://dx.doi.org/10.1038/s41598-019-38664-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6353897/
https://www.ncbi.nlm.nih.gov/pubmed/30700809
http://dx.doi.org/10.1038/s41598-019-38664-x

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