Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 10(6) cm(− 2). With the electrical performance measure...

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Detalles Bibliográficos
Autores principales: Gu, Hong, Tian, Feifei, Zhang, Chunyu, Xu, Ke, Wang, Jiale, Chen, Yong, Deng, Xuanhua, Liu, Xinke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6355890/
https://www.ncbi.nlm.nih.gov/pubmed/30706287
http://dx.doi.org/10.1186/s11671-019-2872-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6355890/
https://www.ncbi.nlm.nih.gov/pubmed/30706287
http://dx.doi.org/10.1186/s11671-019-2872-7

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