Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 10(6) cm(− 2). With the electrical performance measure...

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Autores principales: Gu, Hong, Tian, Feifei, Zhang, Chunyu, Xu, Ke, Wang, Jiale, Chen, Yong, Deng, Xuanhua, Liu, Xinke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6355890/
https://www.ncbi.nlm.nih.gov/pubmed/30706287
http://dx.doi.org/10.1186/s11671-019-2872-7
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author Gu, Hong
Tian, Feifei
Zhang, Chunyu
Xu, Ke
Wang, Jiale
Chen, Yong
Deng, Xuanhua
Liu, Xinke
author_facet Gu, Hong
Tian, Feifei
Zhang, Chunyu
Xu, Ke
Wang, Jiale
Chen, Yong
Deng, Xuanhua
Liu, Xinke
author_sort Gu, Hong
collection PubMed
description Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 10(6) cm(− 2). With the electrical performance measurements conducted, the SBDs show a low turn-on voltage V(on) (0.70~0.78 V) and high current I(on)/I(off) ratio (9.9 × 10(7)~1.3 × 10(10)). The reverse recovery characteristics were investigated. The reverse recovery time was obtained to be 15.8, 16.2, 18.1, 21.22, and 24.5 ns for the 100-, 200-, 300-, 400-, and 500-μm-diameter SBDs, respectively. Meanwhile, the reverse recovery time and reverse recovery charge both show a significant positive correlation with the electrode area.
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spelling pubmed-63558902019-02-24 Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes Gu, Hong Tian, Feifei Zhang, Chunyu Xu, Ke Wang, Jiale Chen, Yong Deng, Xuanhua Liu, Xinke Nanoscale Res Lett Nano Express Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 10(6) cm(− 2). With the electrical performance measurements conducted, the SBDs show a low turn-on voltage V(on) (0.70~0.78 V) and high current I(on)/I(off) ratio (9.9 × 10(7)~1.3 × 10(10)). The reverse recovery characteristics were investigated. The reverse recovery time was obtained to be 15.8, 16.2, 18.1, 21.22, and 24.5 ns for the 100-, 200-, 300-, 400-, and 500-μm-diameter SBDs, respectively. Meanwhile, the reverse recovery time and reverse recovery charge both show a significant positive correlation with the electrode area. Springer US 2019-01-31 /pmc/articles/PMC6355890/ /pubmed/30706287 http://dx.doi.org/10.1186/s11671-019-2872-7 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Gu, Hong
Tian, Feifei
Zhang, Chunyu
Xu, Ke
Wang, Jiale
Chen, Yong
Deng, Xuanhua
Liu, Xinke
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
title Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
title_full Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
title_fullStr Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
title_full_unstemmed Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
title_short Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
title_sort recovery performance of ge-doped vertical gan schottky barrier diodes
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6355890/
https://www.ncbi.nlm.nih.gov/pubmed/30706287
http://dx.doi.org/10.1186/s11671-019-2872-7
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