Cargando…
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 10(6) cm(− 2). With the electrical performance measure...
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6355890/ https://www.ncbi.nlm.nih.gov/pubmed/30706287 http://dx.doi.org/10.1186/s11671-019-2872-7 |