Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

This paper theoretically revisits the low-frequency noise behavior of the inversion-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) and the buried-channel SOI MOSFET because the quality of both Si/SiO(2) interfaces (top and bottom) should modulate the low-...

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Detalles Bibliográficos
Autor principal: Omura, Yasuhisa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356238/
https://www.ncbi.nlm.nih.gov/pubmed/30583561
http://dx.doi.org/10.3390/mi10010005

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356238/
https://www.ncbi.nlm.nih.gov/pubmed/30583561
http://dx.doi.org/10.3390/mi10010005

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