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Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

This paper theoretically revisits the low-frequency noise behavior of the inversion-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) and the buried-channel SOI MOSFET because the quality of both Si/SiO(2) interfaces (top and bottom) should modulate the low-...

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Detalles Bibliográficos
Autor principal:	Omura, Yasuhisa
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356238/ https://www.ncbi.nlm.nih.gov/pubmed/30583561 http://dx.doi.org/10.3390/mi10010005

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