High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel interface in the drain regions, and increase the tun...

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Detalles Bibliográficos
Autores principales: Duan, Xiaoling, Zhang, Jincheng, Chen, Jiabo, Zhang, Tao, Zhu, Jiaduo, Lin, Zhiyu, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356239/
https://www.ncbi.nlm.nih.gov/pubmed/30669609
http://dx.doi.org/10.3390/mi10010075

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356239/
https://www.ncbi.nlm.nih.gov/pubmed/30669609
http://dx.doi.org/10.3390/mi10010075

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