Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I(ON)) and low-level OFF-state current (I(OFF...

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Detalles Bibliográficos
Autores principales: Kim, Jang Hyun, Kim, Hyun Woo, Kim, Garam, Kim, Sangwan, Park, Byung-Gook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356684/
https://www.ncbi.nlm.nih.gov/pubmed/30621021
http://dx.doi.org/10.3390/mi10010030

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356684/
https://www.ncbi.nlm.nih.gov/pubmed/30621021
http://dx.doi.org/10.3390/mi10010030

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