Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I(ON)) and low-level OFF-state current (I(OFF...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Jang Hyun, Kim, Hyun Woo, Kim, Garam, Kim, Sangwan, Park, Byung-Gook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356684/
https://www.ncbi.nlm.nih.gov/pubmed/30621021
http://dx.doi.org/10.3390/mi10010030
Descripción
Sumario:In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I(ON)) and low-level OFF-state current (I(OFF)); ambipolar current (I(AMB)). In detail, its I(ON) is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The I(AMB) can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group’s results.

Ejemplares similares