Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I(ON)) and low-level OFF-state current (I(OFF...

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Autores principales: Kim, Jang Hyun, Kim, Hyun Woo, Kim, Garam, Kim, Sangwan, Park, Byung-Gook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356684/
https://www.ncbi.nlm.nih.gov/pubmed/30621021
http://dx.doi.org/10.3390/mi10010030
_version_ 1783391609222594560
author Kim, Jang Hyun
Kim, Hyun Woo
Kim, Garam
Kim, Sangwan
Park, Byung-Gook
author_facet Kim, Jang Hyun
Kim, Hyun Woo
Kim, Garam
Kim, Sangwan
Park, Byung-Gook
author_sort Kim, Jang Hyun
collection PubMed
description In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I(ON)) and low-level OFF-state current (I(OFF)); ambipolar current (I(AMB)). In detail, its I(ON) is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The I(AMB) can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group’s results.
format Online
Article
Text
id pubmed-6356684
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-63566842019-02-05 Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain Kim, Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Park, Byung-Gook Micromachines (Basel) Article In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I(ON)) and low-level OFF-state current (I(OFF)); ambipolar current (I(AMB)). In detail, its I(ON) is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The I(AMB) can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group’s results. MDPI 2019-01-07 /pmc/articles/PMC6356684/ /pubmed/30621021 http://dx.doi.org/10.3390/mi10010030 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Kim, Jang Hyun
Kim, Hyun Woo
Kim, Garam
Kim, Sangwan
Park, Byung-Gook
Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
title Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
title_full Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
title_fullStr Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
title_full_unstemmed Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
title_short Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
title_sort demonstration of fin-tunnel field-effect transistor with elevated drain
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356684/
https://www.ncbi.nlm.nih.gov/pubmed/30621021
http://dx.doi.org/10.3390/mi10010030
work_keys_str_mv AT kimjanghyun demonstrationoffintunnelfieldeffecttransistorwithelevateddrain
AT kimhyunwoo demonstrationoffintunnelfieldeffecttransistorwithelevateddrain
AT kimgaram demonstrationoffintunnelfieldeffecttransistorwithelevateddrain
AT kimsangwan demonstrationoffintunnelfieldeffecttransistorwithelevateddrain
AT parkbyunggook demonstrationoffintunnelfieldeffecttransistorwithelevateddrain

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