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Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I(ON)) and low-level OFF-state current (I(OFF...

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Detalles Bibliográficos
Autores principales:	Kim, Jang Hyun, Kim, Hyun Woo, Kim, Garam, Kim, Sangwan, Park, Byung-Gook
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6356684/ https://www.ncbi.nlm.nih.gov/pubmed/30621021 http://dx.doi.org/10.3390/mi10010030

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