PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In(0.35)Ga(0.65)As(0.095)Sb(0.905) in ter...

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Detalles Bibliográficos
Autores principales: Cheng, Hui-Wen, Lin, Shen-Chieh, Li, Zong-Lin, Sun, Kien-Wen, Lee, Chien-Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6357140/
https://www.ncbi.nlm.nih.gov/pubmed/30669560
http://dx.doi.org/10.3390/ma12020317

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6357140/
https://www.ncbi.nlm.nih.gov/pubmed/30669560
http://dx.doi.org/10.3390/ma12020317

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