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PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In(0.35)Ga(0.65)As(0.095)Sb(0.905) in ter...

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Detalles Bibliográficos
Autores principales:	Cheng, Hui-Wen, Lin, Shen-Chieh, Li, Zong-Lin, Sun, Kien-Wen, Lee, Chien-Ping
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6357140/ https://www.ncbi.nlm.nih.gov/pubmed/30669560 http://dx.doi.org/10.3390/ma12020317

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