Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In(0.15)Al(0.85)As/GaAs(0.85)Sb(0.15) strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy at 77 K. Thin In(0.15)Al(0.85)As laye...

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Detalles Bibliográficos
Autores principales: Salhi, A., Alshaibani, S., Alaskar, Y., Albrithen, H., Albadri, A., Alyamani, A., Missous, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6358628/
https://www.ncbi.nlm.nih.gov/pubmed/30707322
http://dx.doi.org/10.1186/s11671-019-2877-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6358628/
https://www.ncbi.nlm.nih.gov/pubmed/30707322
http://dx.doi.org/10.1186/s11671-019-2877-2

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